Yoh Kanji | Research Center For Interface Quantum Electronics Hokkaido University
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概要
関連著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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TAKEUCHI Hayato
Research Center for Interface Quantum Electronics, Hokkaido University
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KONDA Jun
Research Center for Interface Quantum Electronics, Hokkaido University
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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SHIINA Sanshiro
Research Center for Interface Quantum Electronics, Hokkaido University
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Tanimura Arata
Research Center For Interface Quantum Electronics Hokkaido University
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Konda Jun
Research Center For Interface Quantum Electronics Hokkaido University
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Shiina Sanshiro
Research Center For Interface Quantum Electronics Hokkaido University
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Takeuchi Hayato
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University
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TANIMURA Arata
Research and Development Dept., Hokkaido Electric Power Co., Inc.
著作論文
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE