Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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TAKEUCHI Hayato
Research Center for Interface Quantum Electronics, Hokkaido University
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KONDA Jun
Research Center for Interface Quantum Electronics, Hokkaido University
関連論文
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- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE