Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation
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概要
- 論文の詳細を見る
We have studied transport characteristics through a lateral p--n--p graphene structure with relatively wide n-channel gate length. The source-to-drain length, gate width and gate length were 4, 0.5, and 0.2 μm, respectively. Although the tunnel barrier thickness of 2000 Å was comparable to the estimated mean free path, the observed conductance oscillation due to Fabry--Pérot resonance clearly indicated Klein tunneling.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-06-25
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Konishi Keita
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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