A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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NAKANO Takaya
Research Center for Interface Quantum Electronics, Hokkaido University
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NAKAGAWA Takayuki
Research Center for Interface Quantum Electronics, Hokkaido University
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Nakano Takaya
Research Center For Interface Quantum Electronics Hokkaido University
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Nakagawa Takayuki
Research Center For Interface Quantum Electronics Hokkaido University
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- A High Performance p-Channel Transistor: β-MOS FET
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE