Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi Ryouji
Research Center For Interface Quantum Electronics Hokkaido University
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KOIZUMI Ryoji
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi R
Research Center For Interface Quantum Electronics Hokkaido University
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Koizumi Ryoji
Research Center For Interface Quantum Electronics Hokkaido University
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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- Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
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- Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure ( Quantum Dot Structures)
- Spin-Polarized Electron Injection through an Fe/InAs Junction
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- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- A High Performance p-Channel Transistor: β-MOS FET
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE