Koizumi Ryouji | Research Center For Interface Quantum Electronics Hokkaido University
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概要
- KOIZUMI Ryoujiの詳細を見る
- 同名の論文著者
- Research Center For Interface Quantum Electronics Hokkaido Universityの論文著者
関連著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Koizumi Ryouji
Research Center For Interface Quantum Electronics Hokkaido University
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HASHIMOTO Naotaka
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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IKEDA Shuji
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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Koizumi R
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh K
Hokkaido Univ. Sapporo Jpn
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KOIZUMI Ryouji
Research Center for Interface Quantum Electronics, Hokkaido University
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Ikeda Shuji
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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Hashimoto Naotaka
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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KOIZUMI Ryoji
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi Ryoji
Research Center For Interface Quantum Electronics Hokkaido University
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060, Japan
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Koizumi Ryouji
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060, Japan
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Hashimoto Naotaka
Semiconductor & Integrated Circuits Division, Hitachi Ltd., 5-20-1 Josuihoncho, Kodaira-shi, Tokyo 187, Japan
著作論文
- A High Performance p-Channel Transistor:β-MOS FET
- A High Performance p-Channel Transistor : β-MOS FET
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- A High Performance p-Channel Transistor: β-MOS FET