Yoh Kanji | Research Center For Integrated Quantum Electronics Hokkaido University
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概要
関連著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi Ryouji
Research Center For Interface Quantum Electronics Hokkaido University
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KONDA Jun
Research Center for Interface Quantum Electronics, Hokkaido University
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HASHIMOTO Naotaka
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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IKEDA Shuji
Semiconductor & Integrated Circuits Division, Hitachi Ltd.
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Koizumi R
Research Center For Interface Quantum Electronics Hokkaido University
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Konda Jun
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh K
Hokkaido Univ. Sapporo Jpn
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TAKEUCHI Hayato
Research Center for Interface Quantum Electronics, Hokkaido University
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KOIZUMI Ryouji
Research Center for Interface Quantum Electronics, Hokkaido University
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Ikeda Shuji
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Sueoka Kazuhisa
Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University
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Ramsteiner Manfred
Paul-drude-institut Fur Festkorperelektronik
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SHIINA Sanshiro
Research Center for Interface Quantum Electronics, Hokkaido University
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KOIZUMI Ryoji
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi Ryoji
Research Center For Interface Quantum Electronics Hokkaido University
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OHNO Hiroshi
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University
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Nishiguchi Norihiko
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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Shiina Sanshiro
Research Center For Interface Quantum Electronics Hokkaido University
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Takeuchi Hayato
Research Center For Interface Quantum Electronics Hokkaido University
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Nakano Takaya
Research Center For Interface Quantum Electronics Hokkaido University
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Nakagawa Takayuki
Research Center For Interface Quantum Electronics Hokkaido University
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Konishi Keita
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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TANIMURA Arata
Research and Development Dept., Hokkaido Electric Power Co., Inc.
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Ohno Munekazu
Division Of Materials Science And Engineering Graduate School Of Engineering Hokkaido University
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Mukasa Koichi
Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University
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Ohno Munekazu
Division Of Material Science And Engineering Graduate School Of Engineering Hokkaido University
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Hashimoto Naotaka
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Kawaharazuka Atsushi
Paul-drude-institut Fur Festkorperelektronik
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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NISHIGUCHI Norihiko
Department of Applied Physics, Hokkaido University
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TABUCHI Yoshihisa
Research Center for Interface Quantum Electronics, Hokkaido University
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NISHIGUCHI Norihiko
Research Center for Interface Quantum Electronics, Hokkaido University
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Konda Jun
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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Tanimura Arata
Research Center For Interface Quantum Electronics Hokkaido University
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Mukasa Koichi
Nanoelectronic Laboratory Graduate School Of Engineering Hokkaido University
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Tabuchi Yoshihisa
Research Center For Interface Quantum Electronics Hokkaido University
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Nishiguchi N
Hokkaido Univ. Sapporo Jpn
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Nishiguchi Norihiko
Department Of Applied Physics Hokkaido University
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Shiina Sanshiro
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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NAKANO Takaya
Research Center for Interface Quantum Electronics, Hokkaido University
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NAKAGAWA Takayuki
Research Center for Interface Quantum Electronics, Hokkaido University
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Kawaharazuka Atsushi
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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Matsuda Takashi
Research Institute of Superconductor Science and Systems, Kyushu University, Fukuoka 819-0395, Japan
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University, N13, W8, Kita-ku, Sapporo 060, Japan
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Yoh Kanji
Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060, Japan
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060, Japan
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Yoh Kanji
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University
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Koizumi Ryouji
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060, Japan
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Sueoka Kazuhisa
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan
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Hashimoto Naotaka
Semiconductor & Integrated Circuits Division, Hitachi Ltd., 5-20-1 Josuihoncho, Kodaira-shi, Tokyo 187, Japan
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Saitoh Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060, Japan
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Mukasa Koichi
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan
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Ohno Hiroshi
Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan
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Ramsteiner Manfred
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
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Ishikura Tomotsugu
Research Center of Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Cui Zhixin
Research Center of Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Zou Liumin
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
著作論文
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A High Performance p-Channel Transistor:β-MOS FET
- A High Performance p-Channel Transistor : β-MOS FET
- Thermodynamic Calculation of Phase Equilibria in As-Fe-In Ternary System Based on CALPHAD Approach
- Energy-Dependent Effective Mass Approximation in One-Dimensional Quantum Dots ( Quantum Dot Structures)
- Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure ( Quantum Dot Structures)
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Thermal stability of Pd gate in pseudomorphic InGaAs heterostructures (Special issue: Microprocesses and nanotechnology)
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE
- Proposal of graphene bandgap control by hexagonal network formation (Special issue: Microprocesses and nanotechnology)
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- A High Performance p-Channel Transistor: β-MOS FET
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE