Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University
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SHIINA Sanshiro
Research Center for Interface Quantum Electronics, Hokkaido University
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Shiina Sanshiro
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University
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