Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University
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SAITOH Toshiya
Research Center for Interface Quantum Electronics, Hokkaido University
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TAKEUCHI Hayato
Research Center for Interface Quantum Electronics, Hokkaido University
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KONDA Jun
Research Center for Interface Quantum Electronics, Hokkaido University
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Saitoh Toshiya
Research Center For Interface Quantum Electronics Hokkaido University
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Konda Jun
Research Center For Interface Quantum Electronics Hokkaido University
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Takeuchi Hayato
Research Center For Interface Quantum Electronics Hokkaido University
関連論文
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
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- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Thermal stability of Pd gate in pseudomorphic InGaAs heterostructures (Special issue: Microprocesses and nanotechnology)
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- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- A High Performance p-Channel Transistor: β-MOS FET
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE