Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure (<Special Issue> Quantum Dot Structures)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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KONDA Jun
Research Center for Interface Quantum Electronics, Hokkaido University
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Yoh Kanji
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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SHIINA Sanshiro
Research Center for Interface Quantum Electronics, Hokkaido University
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NISHIGUCHI Norihiko
Research Center for Interface Quantum Electronics, Hokkaido University
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Konda Jun
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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Konda Jun
Research Center For Interface Quantum Electronics Hokkaido University
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Nishiguchi Norihiko
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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Shiina Sanshiro
Research Center For Interface Quantum Electronics Hokkaido University:department Of Applied Physics
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Shiina Sanshiro
Research Center For Interface Quantum Electronics Hokkaido University
関連論文
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A High Performance p-Channel Transistor:β-MOS FET
- A High Performance p-Channel Transistor : β-MOS FET
- Thermodynamic Calculation of Phase Equilibria in As-Fe-In Ternary System Based on CALPHAD Approach
- Energy-Dependent Effective Mass Approximation in One-Dimensional Quantum Dots ( Quantum Dot Structures)
- Self-Assembled InAs Quantum Dots Buried in AlGaAs Barrier and Their Application to Split-Gate HEMT Operating at 77K
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Fabrication of p^+-Gate InAs-Channel HEMT Based on InP
- Charging Effect of InAs Dots in Split-Gate High Electron Mobility Transistor Structure ( Quantum Dot Structures)
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Thermal stability of Pd gate in pseudomorphic InGaAs heterostructures (Special issue: Microprocesses and nanotechnology)
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE
- Proposal of graphene bandgap control by hexagonal network formation (Special issue: Microprocesses and nanotechnology)
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- A High Performance p-Channel Transistor: β-MOS FET
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Fabrication of p--n--p Graphene Structure and Observation of Current Oscillation
- Optical Characterization of InAs Quantum Dots Fabricated by Molecular Beam Epitaxy
- A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
- Regular Array Formation of Self-Assembled InAs Dots Grown on Patterned (111)B GaAs Substrate by MBE