A Novel Bistable Double-Barrier Resonant Tunnel Diode by Charging Effect of InAs Dots
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概要
- 論文の詳細を見る
We report on a novel bistable current voltage characteristics of GaAs/AlGaAs double-barrier resonant tunnel diodes (DBRTDs) with self-assembled InAs dots buried in the GaAs cathode layer. The memory effect was observed at room temperature and is likely to be caused by the charging and discharging of InAs dots, where the discharging takes place through tunneling via resonance states in the adjacent quantum well.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-15
著者
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Yoh Kanji
Research Center For Integrated Quantum Electronics Hokkaido University
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Nakano Takaya
Research Center For Interface Quantum Electronics Hokkaido University
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Nakagawa Takayuki
Research Center For Interface Quantum Electronics Hokkaido University
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Yoh Kanji
Research Center for Interface Quantum Electronics, Hokkaido University, N13, W8, Kita-ku, Sapporo 060, Japan
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