Ramsteiner Manfred | Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

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概要

• Ramsteiner Manfred E.の詳細を見る
• 同名の論文著者
• Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germanyの論文著者

関連著者

• Ramsteiner Manfred

  Paul-drude-institut Fur Festkorperelektronik

• Ramsteiner Manfred

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Yoh Kanji

  Research Center For Integrated Quantum Electronics Hokkaido University

• Notzel Richard

  Paul-drude-institut Fur Festkorperelektronik

• Ploog Klaus

  Paul-drude-institut Fur Festkorperelektronik

• Daweritz Lutz

  Paul-drude-institut Fur Festkorperelektronik

• Sueoka Kazuhisa

  Nanoelectronics Laboratory Graduate School Of Engineering Hokkaido University

• Ploog Klaus

  Paul-drude-institut Feur Festkoerperelektronik Berlin Germany

• Menniger Johann

  Paul-drude-institut Fur Festkorperelektronik

• OHNO Hiroshi

  Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University

• Mukasa Koichi

  Nanoelectronic Laboratory Graduate School Of Engineering Hokkaido University

• TRAMPERT Achim

  Paul-Drude-Institut fur Festkorperelektronik

• SCHONHERR Hans-Peter

  Paul-Drude-Institut fur Festkorperelektronik

• Kawaharazuka Atsushi

  Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

• Yoh Kanji

  Research Center for Interface Quantum Electronics (RCIQE), Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan

• Sueoka Kazuhisa

  Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan

• Mukasa Koichi

  Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan

• Ohno Hiroshi

  Nanoelectronics Laboratory, Graduate School of Engineering, Hokkaido University, N13 W8, Kita-ku, Sapporo 060-8628, Japan

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著作論文

• Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy
• Spin-Polarized Electron Injection through an Fe/InAs Junction

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