Saitoh T | Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt

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著作論文

904 レーザーアブレーションを利用したクラスター生成装置におけるレーザー誘起衝撃波の解析
18pTD-9 時空間局在型クラスター源SCCSによるサイズ制御シリコンクラスター生成
時空間局所閉じ込め型クラスタービーム源の開発
24pA-4 内部状態の揃ったクラスター生成源の開発(II)
26pB-4 内部状態を規定したクラスター生成源の開発
28a-S-8 ショック波を利用したレーザー蒸発型クラスター生成の原理
Effect of Organic Phase on Dynamic and Collective Behavior of Surfactants at Liquid/Liquid Interfaces by a Time-Resolved Quasi-Elastic Laser-Scattering Method
Thermal Lens Microscope
Picosecond Energy Transfer at Gold/Electrolyte Interfaces Using Transient Reflecting Grating Method under Surface Plasmon Resonance Condition
Analysis of Serum Proteins Adsorbed to a Hemodialysis Membrane of Hollowfiber Type by Thermal Lens Microscopy
Direct Measurements of Femtosecond Energy Dissipation Processes of Hot Electrons in a Gold Film
Photoemission and X-Ray Absorption Study of La_Sr_xMnO_3
Effect of Hydrogen-Radical Annealing for SiO_2 Passivation
Highly Sensitive and Direct Detection of DNA Fragments Using a Laser-Induced Capillary Vibration Effect
Molecular Transport between Two Phases in a Microchannel
Integration of Flow Injection Analysis and Zeptomole-Level Detection of the Fe(II)-ο-Phenanthroline Complex
Sub-Zeptomole Detection in a Microfabricated Glass Channel by Thermal-Lens Microscopy
Preparation of Ge_Cy Alloys by C Implantation into Ge Crystal and Their Raman Spectra : Semiconductors
Infrared Absorption Spectra of C Local Mode in Si_Ge_xC_y Crystals : Semiconductors
Bandgap and Strain Engineering in SiGeC Heterojunction Bipolar Transistors
Femtosecond Transient Reflecting Grating Methods and Analysis of the Ultrafast Carrier Dynamics on Si(111) Surfaces
SiN_x:H/SiO_2 Double-Layer Passivation With Hydrogen-Radical Annealing For Solar Cells
Base Current Control in Low-V_-Operated SiGeC Heterojunction Bipolar Transistors Using SiGe-Cap Structure and High-Carbon-Content Base
Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
Strain Relaxation Processes in GaAs on Si by Two Groups of Misfit Dislocations
Systematic Aspects of the Electronic Structure of 3d Transition-Metal Compounds
Growth and Characterization of GaAs/GaSe/Si Heterostructures
GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy
A Novel Contactless and Nondestructive Measurement Method of Surface Recombination Velocity on Silicon Surfaces by Photoluminescence
Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
Improvement of Properties of SrTiO_3 Thin Films Deposited at Low Temperature and High Rate by Sputtering Gas
Low-Temperature and High-Rate Deposition of SrTiO_3 Thin Films by RF Magnetron Sputtering
Fine-Tolerance Resonator Applications of Bismuth-Layer-Structured Ferroelectric Ceramics
Energy Trapping Characteristics of Bismuth Layer Structured Compound CaBi_4Ti_4O_

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