GaAs/AlAs and AlAs/GaAs Interface Formation Process Studied by Coaxial Impact-Collision Ion Scattering Spectroscopy: Comparison between Alternating and Simultaneous Source Supply
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-04-01
著者
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Palmer Joyce
Optoelectronics Technology Research Laboratory
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TAMURA Masao
Optoelectronics Technology Research Laboratory
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Tamura M
Univ. Tokyo Tokyo Jpn
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Saitoh T
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Saitoh T
Ntt Basic Research Laboratories Physical Science Laboratory
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Saitoh T
Semiconductor Device Group Advanced Devices Development Center Matsushita Electric Industrial Co. Lt
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SAITOH Tohru
Optoelectronics Technology Research Laboratory
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Tamura Masao
Optoelectronic Research Laboratory:(present Address) Angstrom Technology Partnership
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