High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-06-20
著者
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Tamura M
Univ. Tokyo Tokyo Jpn
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TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
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Ishitani T
Semiconductor Energy Lab. Co. Ltd. Kanagawa Jpn
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Tamura Masao
Central Research Laboratory
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ICHIKAWA Masakazu
Central Research Laboratory, Hitachi Lid.
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Ishitani T
Central Research Laboratory Hitachi Ltd
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Ishitani Tohru
Central Research Laboratory Hitachi Ltd.
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Ishitani Tohru
Central Research Laboratory Hitachi Lid.
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Doi Takahisa
Central Research Laboratory, Hitachi Ltd.
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Ichikawa Masakazu
Central Research Laboratory
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Doi Takahisa
Central Research Laboratory
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SHUKURI Shoji
Central Research Laboratory, Hitachi Ltd.
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Shukuri S
Semiconductor & Integrated Circuits Div.hitachi Ltd.
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Shukuri Shoji
Central Research Laboratory Hitachi Ltd.
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Ichikawa Masakazu
Central Research Laboratory Hitachi Ltd.
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