very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
スポンサーリンク
概要
- 論文の詳細を見る
A novel plasma-CVD process has been developed for growing specular silicon epitaxial layers at very low temperatures of approximately 200℃. The epitaxial layers were deposited from SiH_4-PH_3 gases diluted with H_2 on single-crystal substrates just after being etched in a HF dip. The highest electron mobility and lowest resistivity of the n^+-layers were 30 cm^2 / V・s and 4×10^<-4> Ω・cm, respectively. This technology has been successfully applied to fabricate bipolar transistors with a high curremt gain of 370.
- 社団法人応用物理学会の論文
- 1988-04-20
著者
-
TAMURA Masao
Central Research Laboratory, Hitachi, Ltd.
-
UEMATSU Tsuyoshi
Central Research Laboratory
-
Tamura Masao
Central Research Laboratory
-
Tamura Masao
Central Research Laboratory Hitachi Ltd.
-
Matsubara Sunao
Central Research Laboraotry
-
Saitoh Tadashi
Central Research Laboratory
-
KONDO Masao
Central Research Laboratory, Hitachi, Ltd.
-
Kondo Masao
Central Research Laboratory Hitachi Ltd.
-
Saitoh Tadashi
Central Research Laboraotry
関連論文
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in silicon Solar Cells
- Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
- Reduction of Gap State Density in a-SiGe:H Alloys
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Characterization of Laser-Induced Epitaxial Si Crystal by Evaluating MOSFET's Fabricated in Grown Layers : A-6: SILICON CRYSTALS
- Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon : A-3: DEVICE TECHNOLOGY (III)
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- Generation of Dislocations Induced by Chemical Vapor Deposited Si_3N_4 Films on Silicon
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2
- Novel Amorphous Silicon Solar Cells Prepared by Photochemical Vapor Deposition : LATE NEWS
- High Dose Rate Effect of Focused-Ion-Beam Boron Implantation into Silicon
- Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
- Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
- Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
- Submicron Channel MOSFET Using Focused Boron Ion Beam Implantation into Silicon
- Single Pulse Laser Annealing of a Double-Implanted Layer
- Improvement of Crystalline Quality of SOS with Laser Irradiation Techniques
- Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon
- very-Low-Temperature Silicon Epitaxy by Plasma-CVD Using SiH_4-PH_3-H_2 Reactants for Bipolar Devices : Condensed Matter
- Thermal Behavior of B, P and As Atoms in Supersaturated Si Produced by Ion Implantation and Pulsed-Laser Annealing
- Secondary Defects in 2 MeV Phosphorus Implanted Silicon
- Optimization of High-Efficiency n^+-p-p^+ Back-Surface-Field Silicon Solar Cells
- Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
- Distribution and Character of Misfit Dislocations in Homoepitaxial Silicon Crystals
- Low Energy and High Dose Phosphorus Ion Implantation into Silicon through SiO_2 Film
- Si Bridging Epitaxy from Si Windows onto SiO_2 by Q-Switched Ruby Laser Pulse Annealing
- Contactless Measurement of Wafer Lifetime by Free Carrier Infrared Absorption : C-6: CHARACTERIZATION
- Fabrication and Properties of Silicon Solar Cells Using Squarely Shaped Crystals : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
- Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
- Polycrystalline Indium Phosphide Solar Cells Fabricated on Molybdenum Substrates
- Microstructure of Polycrystalline Indium Phosphide Prepared by Chemical Vapor Deposition
- Characterization of External Quantum Efficiencies of GaAs : Si Light-Emitting Diodes
- Epitaxial Transformation of Ion-Implanted Polycrystalline Si Films on (100) Si Substrates by Rapid Thermal Annealing
- Non-Destructive Method of Observing Inhomogeneities in p-n Junctions with a Chopped Photon Beam
- Czochralski Growth of Square Silicon Single Crystals
- Formulation of Power Loss Equation for an Emitter with Dot Contacts and Proposal of an Improved Emitter Structure in Silicon Solar Cells
- Highly Efficient, Large-Area Polycrystalline Silicon Solar Cells Fabricated Using Hydrogen Passivation Technology
- Characterization of Si Layers Deposited on (100) Si Substrates by Plasma CVD and Its Application to Si HBTs
- Low-Temperature Boron Gettering for Improving the Carrier Lifetime in Fe-Contaminated Bifacial Silicon Solar Cells with n+pp+ Back-Surface-Field Structure