Lattice Defects in High-Dose As Implantation into Localized Si area : Condensed Matter
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Cross-sectional transmission electron microscopy observations have been carried out to clarify two-dimensional depth distribution of lattice defects generated in high-dose (5x10^<15> and 2x10<16> ions/cm^2) 80 and 150kev As-implanted, annealed Si through 1.0 and 1.5 μm windows on (100) Si. Amorphous Si (a-Si) layer thicknesses formed by implantation range between projected range, R_p, +(5〜6) standards deviation, ΔR_p with a lateral spread of about 0.18 times a-Si thickness under the mask edge. Typical post-annealed, induced defects in such amorphous layers are mask edge defects composed of dislocation lines caused by a complicated process for recovering mask edge amorphous layers, together with commonly observed dislocation loops in high-dose As implantation. Interaction between dislocation loops and knocked on oxygen atoms is discussed, particularly concerning the elimination or survival of As-rich precipitate-induced dislocation loops
- 社団法人応用物理学会の論文
- 1988-12-20
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