Preparation of High Purity a-Si:H Films and Their Light Soaking Effects

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1985-09-20

著者

• Shimada Toshikazu

  Electronics Research Laboratory Nissan Motor Co. Ltd.

• Itoh Hisayoshi

  Institute Of Materials Science University Of Tsukuba

• Nakamura Nobuo

  Central Research Laboratory Hitachi Ltd.

• Nakamura N

  Tokyo Inst. Technol. Yokohama Jpn

• Itoh H

  Semiconductor Academic Research Center

• Nakamura Noboru

  Functional Materials Research Center Sanyo Electric Co. Ltd.

• SHIMADA Toshikazu

  Central Research Laboratory, Hitachi Ltd.

• MURAMATSU Shin-ichi

  Central Research Laboratory

• Itoh Hitoshi

  Semiconductor Academic Research Center

• Nakamura N

  Department Of Information Processing Tokyo Institute Of Technology

• Muramatsu S

  Univ. Tokyo Tokyo Jpn

• MATSUBARA Sunao

  Central Research Laboratory, Hitachi Ltd.

• ITOH Haruo

  Central Research Laboratory, Hitachi Lid.

• Matsubara Sunao

  Central Research Laboraotry

• Shimada T

  Presto Japan Science And Technology Corporation (jst) And Department Of Chemistry The University Of

• Muramatsu S

  Hitachi Cable Ltd. Ibaraki Jpn

• Shimada Toshikazu

  Central Research Laboratory

• Itoh Haruo

  Central Research Laboratory Hitachi Ltd.

関連論文

• Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
• Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
• Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
• Preparation of a-Si_N_x:H Film Using N_2 Microwave Afterglow Chemical Vapor Deposition Method
• Generation Mechanism of Tensile Stress in a-Si_N_x Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
• Residual Stress of a-Si_N_x:H Films Prepared by Afterglow Plasma Chemical Vapor Deposition Technique
• High-Intensity Vacuum Ultraviolet Light Source in Windowless Photochemical Vapor Deposition Reactor and Its Application to a-Si:H Deposition
• Electro- and Thermomigration of Metallic Islands on Si(100) Surface
• Ion-Induced Anger Electrons Emitted from MgO and GaP under Shadowing Conditions
• Anger Electron Emission under Jon-Beam Shadowing Conditions
• Effects of Electrode Geometry on Breakdown Voltage of a Single-Gap Pseudospark Discharge
• Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
• MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
• Trapping and Recormbination of Photogenerated Carriers in As-Growrn High-Temperature-Annealed and Light-Soaked a-Si:H
• Laser Patterning Method for Integrated Type a-Si Solar Cell Submodules
• Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
• High-Performance a-SiGe Solar Cells Using a Super Chamber Method
• Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
• Effects of Electrode Geometry and Gas Pressure on Breakdown Voltage of a Pseudospark Discharge
• Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
• Thermal Properties of Various Ta Precursors Used in Chemical Vapor Deposition of Tantalum Pentoxide
• Interaction of PbTiO_3 Films with Si Substrate ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
• c-Axis-Oriented Pb(Zr, Ti)O_3 Thin Films Prepared by Digital Metalorganic Chemical Vapor Deposition Method
• Preparation of Tetragonal Perovskite Single Phase PbTiO_3 Film Using an Improved Metal-Organic Chemical Vapor Deposition Method Alternately Introdueing Pb and Ti Precursors
• Microstructure of Visible Light Emitting Porous Silicon
• Persistent Spectral Hole-Burning in Semi-Crystalline Matrices Doped with Tetraphenylporphine
• Fine Structure of Porous Si with Visible Photoluminescence
• Classification of Inhomogeneities in Hydrogenated Amorphous Silicon
• Reduction of Gap State Density in a-SiGe:H Alloys
• Tantalum Oxide Films Formed by UV Photo-CVD Using Ozone and TaCl_5
• Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
• Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
• Fast and Efficient Photon-Gated Burning of Persistent Spectral Holes in Donor-Acceptor Electron Transfer Systems
• Photochemical Hole Burning in Highly Doped TPP/PMMA Systems. Energy Migration and Stabilization of Burnt Holes for Subsequent Hole-Burnings : FUTURE TECHNOLOGY
• Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
• Medium-Range Order of Amorphous Silicon Germanium Alloys : Small-Angle X-Ray Scattering Study
• Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
• Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
• Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
• Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
• Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
• Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
• Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
• Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
• Stable, Metastable and Charged Dangling Bonds in Transient Light-Induced ESR of Undoped a-Si:H
• Irradiation-Temperature Dependence of the Light-Induced Effect in a-Si Solar Cells
• Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
• Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
• Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
• Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
• Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
• Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
• Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber
• Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells
• A New Analytical Method of Amorphous Silicon Solar Cells
• Recording Characteristics of Ge Doped Eutectic SbTe Phase Change Discs With Various Compositions and Its Potential for High Density Recording
• Light-Induced Effect of a-Si Films Fabricated Using the Super Chamber
• Deposition of Silicon Nitride Films by Microwave Glow Discharge
• Photoassisted Electrochemical Deposition of Copper from a Bathocuproin Complex
• Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
• Femtosecond Pulse Delivery through Long Multimode Fiber Using Adaptive Pulse Synthesis
• Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
• Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
• Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
• Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor
• Electron Irradiation Effects on a Ba_2YCu_3O_7 Superconductor : Electrical Properties of Condensed Matter
• High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
• Nondestructive Measurement of Minority Carrier Lifetimes in Si Wafers Using Frequency Dependence of ac Photovoltages
• Measurement of Minority Carrier Lifetimes using AC Photovoltages Excited by Two Photon Beams of Different Wavelengths
• A Non-Destructive Method for Measuring Lifetimes for Minority Carriers in Semiconductor Wafers Using Frequency-Dependent ac Photovoltages
• Characteristics of Silicon Solar Cells Fabricated by Non-Mass-Analyzed Ion Implantation : I-1: SILICON SOLAR CELLS (1) : Ion Implantation & Radiation damage
• A Photovoltaic Method for Evaluating Junction Characteristics Using Cut-Off Frequency
• Silicon Solar Cells Fabricated by a New Ion Implantation Concept : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• Characterization of 3-Inch Solar Cells Fabricated from Granular Silicon Obtained in a Fluidized-Bed Reactor : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
• Impurity Gettering of Diffused Solar Cells Fabricated from Metallurgical-Grade Silicon : I-1: SILICON SOLAR CELLS (I)
• Efficient Solar Cells from Metallurgical-Grade Silicon : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
• Eptitaxial Solar Cells on Refined Metallurgical-Grade Silicon : B-1: AMORPHOUS SILICON AND SOLAR CELLS
• Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF_2 on Si(111)Substrate Prepared by Rapid Thermal Annealing
• Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF_2 Epilayers on Si(111) with Rapid Thermal Anneal
• Visible Electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF_2/Si(111) with Rapid Thermal Anneal
• Improvement in Parameter Spreads of YBaCuO/PrBaCuO/YBaCuO Trilayer Junctions
• YBa_2Cu_3O_x Crossover Structures Using CeO_2 Film as Insulating Layer
• Scaling Behavior of YBaCuO/PrBaCuO/YBaCuO Trilayer Josephson Junctions
• Performance of a 600 Mbyte 90 mm Phase-Change Optical Disk against Disk Tilt
• Molecular Beam Epitaxial Growth of ZnSSe with Hg-Xe Lamp Irradiation
• Nitrogen-Doped ZnSe and ZnSSe Grown by Molecular Beam Epitaxy
• Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -Znsse on GaAs
• Preparation and Photovoltaic Characteristics of a-Si Solar Cells Produced by a Consecutive, Separated Reaction Chamber Method : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
• Stopping Cross-Sections of Rare Gases in Amorphous Silicon for MeV Energy Helium Ions
• Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
• Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
• Molecular Beam Epitaxy of SnSe_2 : Chemistry and Electronic Properties of Interfaces
• RHEED Intensity Oscillation during Epitaxial Growth of Layered Materials
• Control of Optical Gap in a-Si_xC_: H Alloy Films Produced by Reactive Sputtering Method : II-2: AMORPHOUS FILM PREPARATION AND CHARACTERIZATION (II)
• Optoelectric Characteristics of a-Si/a-SiC Superlattice-Structure Films and Devices Fabricated by the Photo-CVD Method
• Model for a Quartz-Crystal Tuning Fork Using Torsion Spring at the Joint of the Arm and the Base and Analysis of Its Frequency
• High-Quality p-Type a-SiC Films Obtained by Using a New Doping Gas of B(CH3)3
• The Influence of the Si–H2 Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells

もっと見る 閉じる

スポンサーリンク