Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum

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概要

• 論文の詳細を見る

• The effects of heat treatment in an ultrahigh vacuum on (111)Si crystallinity are investigated using Si substrates and molecular beam epitaxy films. On the heated substrates, a high density of etch pits is observed following Secco etching. The etch pit densities of specimens heated at 600℃, 700℃ and over 800℃ for 100 min are 6×10^7 cm^<-2>, 1.4×10^8 cm^<-2> and 3-5×10^<-9> cm^<-2>, respectively. However, if over 5 nm of the surface is removed by etching, no etch pits are formed. These defects affect the crystal quality of epitaxial layers. Films grown below 700℃ on a substrate preheated to 850℃ have defects in all regions. On the other hand, films grown above 700℃ only have defects within 8 nm of the surface.

• 社団法人応用物理学会の論文
• 1992-12-15

著者

• NAKAGAWA Kiyokazu

  Center for Crystal Science and Technology, University of Yamanashi

• Nakamura Nobuo

  Central Research Laboratory Hitachi Ltd.

• NAKAGAWA Kiyokazu

  Central Research Laboratory, Hitachi Ltd.

• Nakagawa Kenichi

  Liquid Ctystal Laboratories Sharp Corporation

• OHSHIMA Takashi

  Central Research Laboratory, Hitachi, Ltd.

• Nakagawa K

  Center For Crystal Science And Technology University Of Yamanashi

• Nakagawa Kiyokazu

  Central Research Laboratory Hitachi Ltd.

• Nakagawa Keisuke

  Department Of Applied Physics Faculty Of Science Science University Of Tokyo

• Ohshima T

  Hitachi Ltd. Tokyo Jpn

• Ohshima Takashi

  Central Research Laboratory Hitachi Ltd.

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