Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
スポンサーリンク
概要
- 論文の詳細を見る
- 1987-12-20
著者
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NAKAGAWA Kiyokazu
Central Research Laboratory, Hitachi Ltd.
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Nakagawa Kiyokazu
Central Research Laboratory Hitachi Ltd.
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Shiraki Yasuhiro
Central Research Laboratory
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SHIRAKI Yasuhiro
Central Research Laboratory, Hitachi Ltd.
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GORKUM Aart
Central Research Laboratory, Hitachi Ltd.
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GORKUM Aart
Central Research Laboratory, Hitachi Ltd.:Philips Research Laboratories
関連論文
- Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
- Microstructure of Visible Light Emitting Porous Silicon
- Fine Structure of Porous Si with Visible Photoluminescence
- Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices
- MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
- Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
- Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
- Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
- Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low Temperatures
- Nondestructive Observation of Si_Ge_/Ge/ Si_Ge_x Heterostructure Using Soft X-Ray Emission Spectroscopy
- Influence of Strain on Electrical Properties of the Ge Channel in the Modulation-Doped p-Si_Ge_/Ge/Si_Ge_x Heterostructure
- High Hole Mobility in Modulation-Doped and Strain-Controlled p-Si_Ge_/Ge/Si_Ge_ Heterostructures Fabricated Using Molecular Beam Epitaxy
- A 10 ×10 Polycrystalline-Silicon Thin-Film Transistor Matrix for Liquid-Crystal Display : C-4: THIN FILM DEVICES
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
- A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
- Structure Analysis of Oval Defect on Molecular Beam Epitaxial GaAs Layer by Cross-Sectional Transmission Electron Microscopy Observation
- GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : II. Photoluminescence of p-Type Layers Formed by Ion Implantation and Diffusion
- Photoluminescence Observation of Defects in Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
- A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET) : B-3: NOVEL DEVICES
- Formation of Embedded Monocrystalline NiSi_2 Grid Layers in Silicon by MBE