Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• NAKAGAWA Kiyokazu

  Center for Crystal Science and Technology, University of Yamanashi

• NAKAGAWA Kiyokazu

  Central Research Laboratory, Hitachi Ltd.

• USHIO Jiro

  Advanced Research Laboratory, Hitachi Ltd.

• MARUIZUMI Takuya

  Advanced Research Laboratory, Hitachi Ltd.

• Nakagawa Kenichi

  Liquid Ctystal Laboratories Sharp Corporation

• Nakagawa K

  Department Of Advanced Material Science Faculty Of Engineering Kagawa University

• Miyao M

  Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee

• Miyao Masanobu

  Central Research Laboratory

• USHIO Jiro

  Central Research Laboratory, Hitachi, Ltd.

• MARUIZUMI Takuya

  Central Research Laboratory, Hitachi, Ltd.

• Nakagawa K

  Center For Crystal Science And Technology University Of Yamanashi

• Nakagawa Kiyokazu

  Central Research Laboratory Hitachi Ltd.

• Nakagawa Keisuke

  Department Of Applied Physics Faculty Of Science Science University Of Tokyo

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