Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
スポンサーリンク
概要
- 論文の詳細を見る
- 2001-09-25
著者
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SADOH Taizoh
Department of Electronics, Kyushu University
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MIYAO Masanobu
Department of Electronics, Kyushu University
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Inoue H
Optical Device Department Device Development Data Storage Technology Center Tdk Corporation
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Inoue H
Tdk Corp. Nagano Jpn
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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INOUE Hirotoshi
Department of Electrical and Computer Engineering, Kumamoto University
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KENJO Atsushi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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Inoue Hironori
Hitachi Research Laboratory Hitachi Ltd.
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Inoue H
Faculty Of Technology Tokyo Universily Of Agriculture And Technology:(present Address) Nippon Denso
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MIYAUCHI Akihiro
Hitachi Research Laboratory, Hitachi Ltd.
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Kenjo A
Kyushu Univ.
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Miyao M
Central Research Laborotory Hitachi Ltd.:(present Address)information Science And Electrical Enginee
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Miyao Masanobu
Department Of Electronics Kyushu University
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Miyao M
Department Of Electronics Kyushu University
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KENJO Atsushi
Kyushu University, Department of Electronics
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Miyauchi Akihiro
Hitachi Research Laboratory Hitachi Ltd.
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Kenjo A
Kyushu University Department Of Electronics
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Inoue Hajime
Institute Of Applied Physics And Tsukuba Advanced Research Alliance (tara) University Of Tsukuba
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