Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• SADOH Taizoh

  Department of Electronics, Kyushu University

• MIYAO Masanobu

  Department of Electronics, Kyushu University

• Tsunoda Isao

  Department Of Electronics Kyushu University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• NAGATOMO Kei

  Department of Electronics, Kyushu University

• YAMAGUCHI Shinya

  Central Research Laboratory, Hitachi Ltd.

• Nagatomo Kei

  Department Of Electronics Kyushu University

• Miyao M

  Department Of Electronics Kyushu University

関連論文

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• Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
• Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
• Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
• Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
• Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film
• Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
• Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
• Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
• Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
• Behavior of Defects Induced by Low-Energy Ions in Silicon Films
• Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
• Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion
• Solid Phase Crystallization of a-Si in Si/Ge Multi-layer
• Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
• Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
• Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
• Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
• Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films Insulator
• Dose-Dependent Etching Selectivity in SiO_2 by Focused Ion Beam
• Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
• Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
• Novel SiGe-on-Insulator Virtual Substrate Fabricated by Self-Melt-Solidification
• Association between Bite Force and TMD Symptoms in Young Adults
• Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
• Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
• Formation of β-FeSi_Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure
• Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO_2 Layered Structure
• High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode
• High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth
• Giant Ge-on-Insulator Formation by Si--Ge Mixing-Triggered Liquid-Phase Epitaxy
• Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells
• Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
• Formation of $\beta$-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
• Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
• Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
• Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
• Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
• Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
• Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
• Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization
• Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
• Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

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