Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam

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概要

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• The dose-dependent etching characteristics of SiO2 films irradiated with 40 keV Si2+ focused ion beams (FIBs) were comprehensively investigated. The etching rate in a buffered HF increased with increasing dose ($8 \times 10^{13}$–$1 \times 10^{15}$ cm-2), however it decreased for doses exceeding a critical value ($1 \times 10^{15}$ cm-2). The maximum selectivity of the etching rate of the irradiated region to the nonirradiated region was about 14, which was obtained for irradiation with the critical dose. The numerical simulation indicated that all of the Si atoms in SiO2 were displaced by irradiation with this critical dose. A simple model for the etching characteristics was proposed, in which the enhancement of etching by vacancies and the retardation of etching by implanted Si atoms were considered. The etching characteristics obtained by the experiments were quantitatively explained by the model.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• KENJO Atsushi

  Department of Electrical Engineering,Faculty of Engineering,Kyushu University

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Eguchi Hiroomi

  Department Of Electronics Kyusyu University

• Kenjo Atsushi

  Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan

• Eguchi Hiroomi

  Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan

• Miyao Masanobu

  Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan

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