Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
スポンサーリンク
概要
著者
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SADOH Taizoh
Department of Electronics, Kyushu University
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BABA Akira
Center for Transdisciplinary Research, Niigata University
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Baba A
Niigata Univ. Niigata Jpn
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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Baba A
Hachinohe Inst. Technol. Aomori
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BABA Akiyoshi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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KENJO Atsushi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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Baba A
Center For Transdisciplinary Research Niigata University
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Baba A
Kyushu Univ.
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Kenjo A
Kyushu Univ.
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KENJO Atsushi
Kyushu University, Department of Electronics
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Kenjo A
Kyushu University Department Of Electronics
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KENJO Atsushi[et
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
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- Dose-Dependent Etching Selectivity in SiO_2 by Focused Ion Beam
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- Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
- A17 SYNTHESIS OF NANO COMPOSIT ZEOLITE WITH SESQUIOXIDE IN RELATION TO ENVIRONMENTAL POLLUTION REMEDIATION
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- Alignment Properties of Liquid Crystal Molecules under AC and DC Voltage Application Studied by Surface Plasmon Resonance and Optical Waveguide Spectroscopy
- Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
- Formation of $\beta$-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
- Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization
- Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator
- Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
- Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
- Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
- Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization
- Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
- Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures