Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• SADOH Taizoh

  Department of Electronics, Kyushu University

• MIYAO Masanobu

  Department of Electronics, Kyushu University

• TANAKA Masanori

  Department of Pure and Applied Sciences,University of Tokyo

• Sadoh Taizoh

  Department Of Electronics Faculty Of Engineering Kyushu University

• MATSUMOTO Koji

  SUMCO

• ENOKIDA Toyotsugu

  Analyses of Evaluation Center, Fukuryo Semicon Engineering Corporation

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Miyao M

  Department Of Electronics Kyushu University

• Enokida Toyotsugu

  Analyses Of Evaluation Center Fukuryo Semicon Engineering Corporation

• Tanaka Masanori

  Department Of Electronics Kyushu University

• Tanaka Masanori

  Department Of Aeronautics And Astronautics

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