Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex ($x$: 0–1) on Insulating Substrate
スポンサーリンク
概要
- 論文の詳細を見る
The effects of interfacial oxide layers on the Al-induced crystallization (AIC) of amorphous Si1-xGex ($x$: 0–1) films on an insulator at a low temperature (${<}500$ °C) have been investigated. In the case of Si, the inversion of the Si/Al layers was achieved for samples with and without interfacial oxide layers between the Si and Al layers. In addition, it was found that the existence of interfacial oxide layers was required to obtain large grain (${\sim}100$ μm) polycrystalline Si with a (111) orientation. However, in the case of SiGe, the interfacial oxide layers significantly retarded AIC growth. Consequently, layer exchange occurred inhomogenously, which resulted in inhomogenous crystallization even after a long annealing time (410 °C, 100 h). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, complete layer exchange was achieved for samples with the whole Ge fractions ($x$: 0–1) by controlling the air exposure time. A qualitative model is presented.
- 2009-03-25
著者
-
Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
-
Miyao Masanobu
Department Of Electronics Kyushu University
-
Kurosawa Masashi
Department Of Electronics Kyushu University
-
Kurosawa Masashi
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
-
Tsumura Yoshitaka
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
関連論文
- (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique
- Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
- Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
- Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
- Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
- Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film
- Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
- Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
- Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
- Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
- Behavior of Defects Induced by Low-Energy Ions in Silicon Films
- Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
- Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Far-Infrared Photoconductivity in Gallium Arsenide
- Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
- High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode
- High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth
- Giant Ge-on-Insulator Formation by Si--Ge Mixing-Triggered Liquid-Phase Epitaxy
- Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
- A17 SYNTHESIS OF NANO COMPOSIT ZEOLITE WITH SESQUIOXIDE IN RELATION TO ENVIRONMENTAL POLLUTION REMEDIATION
- Role of Vacancy Annihilation in Electrical Activation of P Implanted in Ge
- Role of vacancy annihilation in electrical activation of P implanted in Ge (有機エレクトロニクス)
- Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex ($x$: 0–1) on Insulating Substrate
- High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth
- Formation of Tensilely Strained Germanium-on-Insulator
- Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform
- Effect of Addition of Al to Single-Crystalline CoFe Electrodes on Nonlocal Spin Signals in Lateral Spin-Valve Devices
- Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
- Formation of $\beta$-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
- New Magnetic Flash Memory with FePt Magnetic Floating Gate
- Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization
- Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator
- Room-Temperature Tunneling Magnetoresistance in Magnetic Tunnel Junctions with a D0_{3}-Fe
- Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
- Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
- Molecular Beam Epitaxy of Co
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
- Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
- Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization
- Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
- Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures