Molecular Beam Epitaxy of Co
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概要
- 論文の詳細を見る
We explore epitaxial growth of Co<inf>2</inf>MnSi films on Si(111) or Ge(111) by means of low-temperature molecular beam epitaxy. We find that as-grown Co<inf>2</inf>MnSi films consist of mixed phases with L2<inf>1</inf>-ordered structures and microcrystalline ones. As a result, the magnetic moment, which is nearly half of the ideal value, can be obtained even at very low growth temperature. Post-growth annealing was effective to crystallize the microcrystalline phases observed in the as-grown layer, leading to a further enhancement in the magnetic moment. We discuss a difference in growth mechanism between Co<inf>2</inf>MnSi and other Heusler alloys examined in our previous works.
- 2013-04-25
著者
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Kawano Makoto
Department Of Anesthesia Kagoshima Medical Center
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Hamaya Kohei
Department Of Electronics Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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Yamada Shinya
Department Of Applied Biological Chemistry Faculty Of Agriculture Tohoku University
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Oki Soichiro
Department Of Electronics Kyushu University
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Hamaya Kohei
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Miyao Masanobu
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Yamada Shinya
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Tanikawa Kohei
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Kawano Makoto
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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