Room-Temperature Tunneling Magnetoresistance in Magnetic Tunnel Junctions with a D0_{3}-Fe
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概要
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To inform room-temperature spin functionality of D0<inf>3</inf>-ordered Fe<inf>3</inf>Si, we explore tunneling magnetoresistance (TMR) effects in magnetic tunnel junctions (MTJs) consisting of Co<inf>60</inf>Fe<inf>40</inf>/AlO<inf>x</inf>/Fe<inf>3</inf>Si on Si. We clearly observe reproducible TMR ratios of {\sim}20% at room temperature for all MTJs fabricated. By using Julliere's formula, the room-temperature spin polarization (P) value for D0<inf>3</inf>-ordered Fe<inf>3</inf>Si can be roughly estimated to be ranging from 0.18 to 0.45 when we assume the P values from 0.5 to 0.2 for Co<inf>60</inf>Fe<inf>40</inf>. This study reveals that the room temperature P value for D0<inf>3</inf>-ordered Fe<inf>3</inf>Si is relatively small compared with that for Co-based Heusler alloys reported previously.
- 2013-04-25
著者
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Fujita Yuichi
Department Of Biology Faculty Of Science Osaka University
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Hamaya Kohei
Department Of Electronics Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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Yamada Shinya
Department Of Applied Biological Chemistry Faculty Of Agriculture Tohoku University
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Oki Soichiro
Department Of Electronics Kyushu University
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Fujita Yuichi
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Oki Soichiro
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Takemoto Gotaro
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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Maeda Yuya
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
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