Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
スポンサーリンク
概要
- 論文の詳細を見る
Metal-induced lateral crystallization (MILC) in a-Ge/a-Si/SiO2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. The MILC velocity of a-Si was successfully increased becoming threefold higher than that of a-Si/SiO2 single structure. As a result, poly-Si films with large areas were obtained after 550°C annealing, i.e., ${\sim}10$ μm for 5 h and ${\sim}30$ μm for 15 h. This will be a powerful tool for realizing large poly-Si areas on insulating films for system-in-displays and three-dimensional ultra-large scale integrated circuits.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
-
Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
-
KENJO Atsushi
Department of Electrical Engineering,Faculty of Engineering,Kyushu University
-
Miyao Masanobu
Department Of Electronics Kyushu University
-
Kanno Hiroshi
Department Of Electronics Kyushu University
関連論文
- Pathological and molecular biological aspects of the renal epithelial neoplasms, up-to-date
- (100) Orientation-Controlled Ge Giant-Stripes on Insulating Substrates by Rapid-Melting Growth Combined with Si Micro-Seed Technique
- GERMLINE MUTATIONS IN THE VON HIPPEL-LINDAU DISEASE GENE IN JAPAN ; ITS EPIDEMIOLOGY AND MOLECULAR GENETIC STUDY
- Molecular Genetic Diagnosis of von Hippel-Lindau Disease: Analysis of Five Japanese Families
- Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
- Detection of germline deletions using real-time quantitative polymerase chain reaction in Japanese patients with von Hippel-Lindau disease
- Collagen gel matrix assay as an in vitro chemosensitivity test for malignant astrocytic tumors
- Brainstem Congestion Caused by Direct Carotid-Cavernous Fistula : Case Report
- Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
- Stress-Relaxation Process during Post-Annealing in SGOI Formed by H^+ Irradiation and Oxidation-Induced Ge Condensation
- Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
- Furnace Annealing Behavior of B-doped Poly-SiGe Formed on Insulating Film
- Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
- Thin CoSi_2 Formation on SiO_2 with Low-Energy Ion Irradiation
- Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
- Evaluation of Damage Induced by Low-Energy Ion Irradiation in Silicon
- Behavior of Defects Induced by Low-Energy Ions in Silicon Films
- Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors(Session 1A : Emerging Device Technology 1)
- Acute Lymphocytic Leukemia Recurring in the Spinal Epidural Space : Case Report
- Hemangioblastoma of the Optic Nerve : Case Report
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO_2 by Local Ge Insertion
- Ion Irradiation Stimulated Crystal Nucleation in Amorphous Si on SiO_2
- Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Mechanism of Improved Thermal Stability of B in Poly-SiGe Gate on SiON
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films Insulator
- Dose-Dependent Etching Selectivity in SiO_2 by Focused Ion Beam
- Far-Infrared Photoconductivity in Gallium Arsenide
- Evaluation of Mini Mental State Examination and Brief Psychiatric Rating Scale on aged schizophrenic patients
- Computed tomographic study of aged schizophrenic patients
- Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
- Low-Temperature Formation of Poly-Si_Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization
- Formation of β-FeSi_Ge_x by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]_n Multilayered Structure
- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO_2 Layered Structure
- High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode
- High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth
- Giant Ge-on-Insulator Formation by Si--Ge Mixing-Triggered Liquid-Phase Epitaxy
- Source--Drain Engineering Using Atomically Controlled Heterojunctions for Next-Generation SiGe Transistor Applications
- A17 SYNTHESIS OF NANO COMPOSIT ZEOLITE WITH SESQUIOXIDE IN RELATION TO ENVIRONMENTAL POLLUTION REMEDIATION
- Role of Vacancy Annihilation in Electrical Activation of P Implanted in Ge
- Urinary 8-hydroxy-2'-deoxyguanosine (8-OHdG) Levels in Women with or without Gynecologic Cancer
- Role of vacancy annihilation in electrical activation of P implanted in Ge (有機エレクトロニクス)
- Interfacial-Oxide Layer Controlled Al-Induced Crystallization of Si1-xGex ($x$: 0–1) on Insulating Substrate
- High-Hole-Mobility Single-Crystalline Ge Thin Films Formed on Insulating Substrates by SiGe Mixing-Triggered Directional Melting Growth
- Formation of Tensilely Strained Germanium-on-Insulator
- Epitaxial-Template Structure Utilizing Ge-on-Insulator Stripe Arrays with Nanospacing for Advanced Heterogeneous Integration on Si Platform
- Effect of Addition of Al to Single-Crystalline CoFe Electrodes on Nonlocal Spin Signals in Lateral Spin-Valve Devices
- Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
- Formation of $\beta$-FeSi2-xGex by Ge-Segregation-Controlled Solid-Phase Growth of [a-Si/a-FeSiGe]n Multilayered Structure
- New Magnetic Flash Memory with FePt Magnetic Floating Gate
- Position-Controlled Growth of SiGe Crystal Grains on Insulator by Indentation-Induced Solid-Phase Crystallization
- Nucleation-Controlled Metal-Induced Lateral Crystallization of Amorphous Si1-xGex with Whole Ge Fraction on Insulator
- Room-Temperature Tunneling Magnetoresistance in Magnetic Tunnel Junctions with a D0_{3}-Fe
- Dose-Dependent Etching Selectivity in SiO2 by Focused Ion Beam
- Ge-Channel Thin-Film Transistor with Schottky Source/Drain Fabricated by Low-Temperature Processing
- Molecular Beam Epitaxy of Co
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
- Electric-Field-Assisted Metal-Induced Lateral Crystallization of Amorphous SiGe on SiO2
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Enhanced Metal-Induced Lateral Crystallization in Amorphous Ge/Si/SiO2 Layered Structure
- Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization
- Improved Oxidation-Induced Ge Condensation Technique Using H+ Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator
- Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator
- Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2 Structures