High Quality Single-Crystalline Ge-Rich SiGe on Insulator Structures by Si-Doping Controlled Rapid Melting Growth
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概要
- 論文の詳細を見る
Ge-rich SiGe-on-insulator (SGOI) is required for high speed transistors. We investigated the effects of Si doping on the growth characteristics of SGOI produced by rapid melting growth. The aggregation of Ge, observed for pure Ge wide stripes (${>}5$ μm), can be suppressed by Si doping. Si doping causes rotational growth of SiGe stripes, but this can be controlled using lower Si doping concentrations and growth temperatures. Single-crystalline Ge-rich SGOI (Ge concentration $>96$%) that is wide enough (15 μm) for device fabrication is thus produced. Transmission electron microscopy reveals that the Ge-rich SGOI does not contain dislocations or stacking faults.
- Japan Society of Applied Physicsの論文
- 2010-03-25
著者
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TOKO Kaoru
Department of Electronics, Kyushu University
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TANAKA Takanori
Department of Electronics, Kyushu University
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SADOH Taizoh
Department of Electronics, Kyushu University
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MIYAO Masanobu
Department of Electronics, Kyushu University
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Sadoh Taizoh
Department Of Electronics Faculty Of Engineering Kyushu University
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Toko Kaoru
Department Of Electronics Kyushu University
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Miyao Masanobu
Department Of Electronics Kyushu University
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Tanaka Takanori
Department Of Electronics Kyushu University
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Tanaka Takanori
Department Of Adaptive Machine Systems Osaka University
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