New Magnetic Flash Memory with FePt Magnetic Floating Gate

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概要

• 論文の詳細を見る

• A novel flash memory which has FePt magnetic floating gate was proposed. An FePt magnetic floating gate with a high coercivity was successfully fabricated by DC magnetron sputtering with rapid thermal annealing. As for magnetic properties, the switching magnetic fields of 21 Oe for the NiFe film and 1600 Oe for the FePt film were employed for the control gate and the floating gate materials, respectively. The fundamental characteristics of the magnetic flash memory were confirmed using magnetic metal oxide semiconductor (MOS) capacitor devices and magnetic tunneling diode (MTD) devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• BEA Ji-Chel

  Japan Science and Technology Agency (JST)

• Natori Kenji

  Institute Of Applied Physics University Of Tsukuba

• Fukushima Takafumi

  Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi

• Miyao Masanobu

  Department Of Electronics Kyushu University

• Koyanagi Mitsumasa

  Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University

• Hong Youn-Gi

  Japan Science and Technology Agency (JST), 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Yin Cheng-Kuan

  Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Bea Ji-Chel

  Japan Science and Technology Agency (JST), 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Miyao Masanobu

  Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan

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