Characteristics of Copper Spiral Inductors Utilizing FePt Nanodot Films
スポンサーリンク
概要
- 論文の詳細を見る
We propose a novel Cu spiral inductor with an FePt magnetic nanodot (MND) layer of FePt magnetic nanodots dispersed in SiO2 film by self-assembled nanodot desposition (SAND). We expected an increase in inductance by adopting an MND layer. Nanodot sizes ranging from 2.5 to 3.5 nm in diameter can be well controlled. By optimizing thermal annealing conditions, we formed an FePt MND film with an electromagnetic permeability of 7.7 for passive devices used in a standard radio-frequency integrated circuit (RFIC) process. The quality factors of various spiral inductors were simulated and compared with the measured quality factors of the Cu spiral inductors we fabricated. In addition, the high-frequency characteristics of Cu spiral inductors were successfully observed.
- 2009-04-25
著者
-
Lee Kang-wook
Department Of Internal Medicine College Of Medicine Chungnam National University
-
Fukushima Takafumi
Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi
-
Tanaka Tetsu
Department Of Quantum Materials Science University Of Tokushima
-
Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
-
Jeong Woo-Cheol
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Noriki Akihiro
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Kiyoyama Kouji
Micro/Nano-Machining Research and Education Center, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Murugesan Mariappan
New Energy and Industrial Technology Development Organization (NEDO)
-
Koyanagi Mitsumasa
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Lee Kang-Wook
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
-
Tanaka Tetsu
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
関連論文
- Changes of Renal Lesion-Related Parameters in FGS/Nga and the Parental Mouse Strains, CBA/N and RFM/Nga
- Development of Three-Dimensional Integration Technology for Highly Parallel Image-Processing Chip
- A New Wafer Scale Chip-on-Chip (W-COC) Packaging Technology Using Adhesive Injection Method
- New Three-Dimensional Wafer Bonding Technology Using the Adhesive Injection Method
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method
- Polyimide Optical Waveguide with Multi-Fan-Out for Multi-Chip Module Application
- Trimer V^ Spin Singlet State and Pseudo Gap in LiVS_2 Studied by ^V and ^7Li Nuclear Magnetic Resonance
- Fabrication of Hollow Cylinder Shape Permalloy on the Si Pole
- Ultrashallow Junction Formation by Rapid Thermal Annealing of Arsenic-Adsorbed Layer
- New Reconfigurable Memory Architecture for Parallel Image Processing LSI with Three-Dimensional Structure
- Development of Si Long Microprobe (SiLM) for Platform of Intelligent Neural Implant Microsystem
- Low Power Spin-Transfer MRAM Writing Scheme with Selective Word Line Bootstrap
- Low Power and High Sensitivity MRAM Sensing Scheme with Body Biased Preamplifier
- Estimation of Wire Length Distribution for Evaluating Performance Improvement of Three-Dimensional LSI
- QUANTITATIVE PCR-BASED SCREENING OF THE CO_2 SENSOR PROTEIN OF THE MOSQUITO (ANOPHELES STEPHENSI)(Physiology,Abstracts of papers presented at the 76^ Annual Meeting of the Zoological Society of Japan)
- CO_2 SENSOR PROTEIN IN THE MOSQUITO (ANOPHELES STEPHENSI)(Physiology,Abstracts of papers presented at the 75^ Annual Meeting of the Zoological Society of Japan)
- IDENTIFICATION AND CHARACTERIZATION OF ENCEPHALOPSIN HOMOLOGUES OF THE MOSQUITO AND THE HONEYBEE(Physiology,Abstracts of papers presented at the 76^ Annual Meeting of the Zoological Society of Japan)
- Retinal Prosthesis System with Telemetry Circuit Controlled by Human Eyelid Movement
- Design and Evaluation of a High Speed Routing Lookup Architecture(Implementation and Operation)(Internet Technology IV)
- New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super Chip Integration
- THE NEURAL NETWORK RELATED WITH THE CHROMATIC TYPE RESPONSE OF THE LAMPREY PINEAL(Physiology,Abstracts of papers presented at the 75^ Annual Meeting of the Zoological Society of Japan)
- CHARACTERIZATION OF UV SENSITIVE OPSIN IN THE PINEAL ORGAN OF THE LAMPREY(Physiology,Abstracts of papers presented at the 74^ Annual Meeting of the Zoological Society of Japan)
- UV-SENSITIVE PHOTORECEPTORS IN THE PINEAL ORGAN OF THE RIVER LAMPREY, LAMPETRA JAPONICA(Physiology,Abstracts of papers presented at the 74^ Annual Meeting of the Zoological Society of Japan)
- VISUAL PIGMENTS IN TWO PATHWAYS OF PHOTO-SIGNALS IN THE LAMPREY PINEAL ORGAN(Physiology,Abstracts of papers presented at the 74^ Annual Meeting of the Zoological Society of Japan)
- IDENTIFICATION AND CHARACTERIZATION OF VISUAL PIGMENTS OF THE JUMPING SPIDER(Physiology,Abstracts of papers presented at the 76^ Annual Meeting of the Zoological Society of Japan)
- Two-Dimensional Analytical Subthreshold Model and Optimal Scaling of Fully-Depleted SOI MOSFET Down to 0.1 μm Channel Length
- Multilevel Charge Storage in a Multiple Alloy Nanodot Memory
- Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application
- Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots
- Characteristics of Copper Spiral Inductors Utilizing FePt Nanodot Films
- A Reliable Nonvolatile Memory Using Alloy Nanodot Layer with Extremely High Density
- Characteristics of a Multiple Alloy Nanodot Memory with an Enhanced Charge Storage Capability
- Ultrafast Active Transmission Lines with Low-k Polyimide Integrated with Ultrafast Photoconductive Switches
- New Analytical Model for Subthreshold Current in Short-Channel Fully-Depleted SOI MOSFETs
- New Electrically Thinned Intrinsic-Channel SOI MOSFET with 0.01 μm Channel Length
- COUNTERION SWITCHING IN THE DIVERGENCE OF RHODOPSINS(Physiology,Abstracts of papers presented at the 74^ Annual Meeting of the Zoological Society of Japan)
- COMPARATIVE ANALYSIS ON COUNTERIONS OF VARIOUS RHODOPSINS BY USING OF THEIR MUTANT PROTEINS(Physiology)(Proceedings of the Seventy-Third Annual Meeting of the Zoological Society of Japan)
- Power Supply System Using Electromagnetic Induction for Three-Dimensionally Stacked Retinal Prosthesis Chip
- Evaluation of Platinum-Black Stimulus Electrode Array for Electrical Stimulation of Retinal Cells in Retinal Prosthesis System
- Evaluation of Electrical Stimulus Current Applied to Retina Cells for Retinal Prosthesis
- Dominance of Cl^+_2 or Cl^+ Ions in Time-Modulated Inductively Coupled Cl_2 Plasma Investigated with Laser-Induced Fluorescence Technique and Probe Measurements
- Fundamental Properties of Organic Low-$k$ Dielectrics Usable in the Cu Damascene Process
- Optical Interposer Technology using Buried Vertical-Cavity Surface-Emitting Laser Chip and Tapered Through-Silicon Via for High-Speed Chip-to-Chip Optical Interconnection
- Detection of Metastable Chlorine Ions in Time-Modulated Plasma by Time Resolved Laser-Induced Fluorescence
- Proposal of New Nonvolatile Memory with Magnetic Nano-Dots
- Progress of Three-Dimensional Integration Technology
- New Analytical Model for Subthreshold Current in Short-Channel Fully-Depleted SOI MOSFETs
- Development of Si Double-Sided Microelectrode for Platform of Brain Signal Processing System
- Development of Si Neural Probe with Microfluidic Channel Fabricated Using Wafer Direct Bonding
- Characteristics of Silicon-on-Low $k$ Insulator Metal Oxide Semiconductor Field Effect Transistor with Metal Back Gate
- New Reconfigurable Memory Architecture for Parallel Image-Processing LSI with Three-Dimensional Structure
- Nickel Germanide Formation on Condensed Ge Layer for Ge-on-Insulator Device Application
- Fundamental Study of Complementary Metal Oxide Semiconductor Image Sensor for Three-Dimensional Image Processing System
- Tungsten Through-Silicon Via Technology for Three-Dimensional LSIs
- Effects of Ion Implantation Damage on Elevated Source/Drain Formation for Ultrathin Body Silicon on Insulator Metal Oxide Semiconductor Field-Effect Transistor
- New Silicon-on-Insulator (SOI) Flash Memory with Side Channel and Side Floating Gate
- Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
- New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super-Chip Integration
- Quantitative Derivation and Evaluation of Wire Length Distribution in Three-Dimensional Integrated Circuits Using Simulated Quenching
- Low Power Spin-Transfer Magnetoresistive Random Access Memory Writing Scheme with Selective Word Line Bootstrap
- Novel Optical/Electrical Printed Circuit Board with Polynorbornene Optical Waveguide
- Low-Power and High-Sensitivity Magnetoresistive Random Access Memory Sensing Scheme with Body-Biased Preamplifier
- Vision Chip with Electrical Fovea Motion
- New Magnetic Flash Memory with FePt Magnetic Floating Gate
- New Magnetic Nanodot Memory with FePt Nanodots
- Three-Dimensionally Stacked Analog Retinal Prosthesis Chip
- Low-Loss Optical Interposer with Recessed Vertical-Cavity Surface-Emitting Laser Diode and Photodiode Chips into Si Substrate
- Deep-Trench Etching for Chip-to-Chip Three-Dimensional Integration Technology
- Investigation of Local Bending Stress Effect on Complementary Metal--Oxide--Semiconductor Characteristics in Thinned Si Chip for Chip-to-Wafer Three-Dimensional Integration
- Fabrication and In vivo Evaluation of Poly(3,4-ethylenedioxythiophene) Stimulus Electrodes for Fully Implantable Retinal Prosthesis
- Reductant-Assisted Self-Assembly with Cu/Sn Microbump for Three-Dimensional Heterogeneous Integration
- Multichip Shared Memory Module with Optical Interconnection for Parallel-Processor System
- Novel Silicon On Insulator Metal Oxide Semiconductor Field Effect Transistors with Buried Back Gate
- Study of Insertion Characteristics of Si Neural Probe with Sharpened Tip for Minimally Invasive Insertion to Brain (Special Issue : Solid State Devices and Materials)
- Fabrication and In vivo Evaluation of Poly(3,4-ethylenedioxythiophene) Stimulus Electrodes for Fully Implantable Retinal Prosthesis (Special Issue : Solid State Devices and Materials)
- Ultrafast Active Transmission Lines with Low-$k$ Polyimide Integrated with Ultrafast Photoconductive Switches
- CuSn/InAu μ-bump induced local deformation and mechanical stress in high-density 3D-LSI