Low Power Spin-Transfer Magnetoresistive Random Access Memory Writing Scheme with Selective Word Line Bootstrap
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概要
- 論文の詳細を見る
We describe a new writing scheme with a selective word line bootstrap for spin-transfer magnetoresistive random access memory (MRAM). Applying spin-transfer switching to MRAM, its writing power consumption decreases and its memory cell area is also reduced. However, during write operation, the required bit line cramp voltage for stored data switching depends on the value of stored data, magnetic tunnel junction (MTJ) characteristics, and switching current direction. Therefore, the bit line voltage must be optimized to minimize the power consumption. With the proposed scheme, word line voltage is varied according to the value of writing data in order to decrease the threshold bit line voltage. Furthermore, the spin-transfer MRAM resistance model with reading and writing operations was successfully implemented for the circuit simulation. From the simulation results, it was found that writing threshold bit line bias during writing operation can decrease from 17 to 28% with the proposed selective bootstrap. Also, more than 25% of the cell transistor gate width can be decreased. This result shows that the proposed writing scheme is effective in reducing power consumption, and can also reduce the MRAM cell area.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Sugimura Takeaki
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Fukushima Takafumi
Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi
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Tanaka Tetsu
Department Of Quantum Materials Science University Of Tokushima
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Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Sakaguchi Takeshi
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Koyanagi Mitsumasa
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Tanaka Tetsu
Department of Bioengineering and Robotics, Graduate School of Engineering, Tohoku University, 6-6-01 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Tanaka Tetsu
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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