Fabrication and Evaluation of Magnetic Tunnel Junction with MgO Tunneling Barrier
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概要
- 論文の詳細を見る
Magnetoresistive random access memory (MRAM) has recently attracted considerable attention due to its non-volatility and high programming speed. A high Tunnel magnetoresistance (TMR) ratio is a key factor of MRAM. However, a conventional MRAM using aluminum oxide as insulator film shows a low TMR ratio of several tens of percents. MgO tunneling insulator is one of the candidates for achieving a high TMR ratio. In this study, we fabricated and evaluated Magnetic tunnel junctions (MTJs) with MgO tunneling barrier on a clad Cu word line.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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IKEDA Shoji
Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University
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Lee Young
Laboratory For Nanoelectronics And Spintronics Riec Tohoku Univ.
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Oogane Mikihiko
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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HAYAKAWA Jun
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Toho
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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Oh Hyuckjae
Department Of Bioengineering And Robotics Tohoku University
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Sugimura Takeaki
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Miyazaki Terunobu
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Fukushima Takafumi
Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi
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Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Sakaguchi Takeshi
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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Choi Hoon
Department Of Bioengineering And Robotics Tohoku University
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Park Mungi
Department Of Bioengineering And Robotics Tohoku University
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Fukushima Takafumi
Department of Bioengineering and Robotics, Tohoku University, 01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ahn Sung-Jin
Department of Applied Physics, Graduate School of Engineering, Tohoku University, 05 Aoba-yama, Sendai 980-8579, Japan
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Oh Hyuckjae
Department of Bioengineering and Robotics, Tohoku University, 01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ikeda Shoji
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Sugimura Takeaki
Department of Bioengineering and Robotics, Tohoku University, 01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Park Mungi
Department of Bioengineering and Robotics, Tohoku University, 01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Oogane Mikihiko
Department of Applied Physics, Graduate School of Engineering, Tohoku University, 05 Aoba-yama, Sendai 980-8579, Japan
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Sakaguchi Takeshi
Department of Bioengineering and Robotics, Tohoku University, 01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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