The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits

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概要

• 論文の詳細を見る

• In this paper, we have described the complementary metal–oxide–semiconductor (CMOS)/magnetic tunnel junction (MTJ) integrated process technology; MTJs were fabricated on via metal with surface roughness of 0.3 nm with 0.14 μm CMOS process and $60 \times 180$ nm2 MTJ process. It is shown that by this process technology, the fabricated MTJ on CMOS logic circuit plane achieves a large change in a resistance of 3.63 k$\Omega$ (anti-parallel) with the TMR ratio of 138% at room temperature, which is large enough for a sensing scheme of standard CMOS logic. Furthermore, we have successfully demonstrated the DC and AC operation of this MTJ with write transistors. As the results, our MTJ achieves high enough write/read performance with transistors for realizing MTJ-based logic circuits.

• 2010-04-25

著者

• IKEDA Shoji

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Takahiro Hanyu

  Laboratory for Brainware Systems, Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Iga Fumitaka

  Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Hideo Ohno

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Fumitaka Iga

  Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Katsuya Miura

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Haruhiro Hasegawa

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Jun Hayakawa

  Advanced Research Laboratory, Hitachi Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

• Masashi Kamiyanagi

  Center for Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Ikeda Shoji

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

• Shoji Ikeda

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

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