Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme

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概要

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• A perpendicular magnetic tunnel junction (P-MTJ)-based one-transistor/one-resistor (1T--1R) binary content-addressable memory (CAM) is proposed for a high-density nonvolatile CAM. The proposed CAM cell performs an equality-search operation between an input bit and the corresponding stored bit by detecting the difference of a ``cell resistance'', where the cell resistance is determined by the series connection of one metal--oxide--semiconductor (MOS) transistor and one P-MTJ device. This circuit structure makes it possible to implement a compact nonvolatile CAM cell circuit with 1.25 μm2 of a cell size in a 0.14 μm complementary MOS (CMOS)/P-MTJ process. Moreover, the equality-search operation in a bit-serial fashion is used for great reduction of the activity rate in the proposed CAM cell array, since most of the mismatched words in the CAM are detected by just several higher bits of comparison results in the word circuits. By applying a bit-level fine-grained power gating scheme, a fabricated 64-bit \times 128-word nonvolatile CAM achieves high density with maintaining low search energy under 3.1% of activity rate in the cell array.

• 2011-06-25

著者

• IKEDA Shoji

  Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• Ohno Hideo

  Laboratory For Electronic Intelligent Systems

• Miura Katsuya

  Laboratory For Nanoelectronics And Spintronics Research Institute Of Electrical Communication Tohoku

• HANYU Takahiro

  Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University

• Natsui Masanori

  Laboratory for Brainware Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Matsunaga Shoun

  Center for Spintronics Integrated Systems (CSIS), Tohoku University, Sendai 980-8577, Japan

• Ikeda Shoji

  Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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