Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

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概要

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• Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

• 2009-07-25

著者

• Endoh Tetsuo

  Center For Interdisciplinary Research Tohoku University

• TAKATA Masasuke

  Nagaoka University of Technology

• Suemitsu Maki

  Research Institute Of Electrical Communication Tohoku University

• Akahane Tadashi

  Nagaoka Univ. Technol. Nagaoka‐shi Jpn

• Yasui Kanji

  Nagaoka Univ. Technol. Nagaoka‐shi Jpn

• Nakazawa Hideki

  Graduate School of Science and Technology, Hirosaki University, Hirosaki, Aomori 036-8561, Japan

• Endoh Tetsuo

  Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan

• Komae Yasuaki

  Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

• Ito Takashi

  Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Narita Yuzuru

  Faculty of Engineering, Yamagata University, Yonezawa, Yamagata 992-8510, Japan

• Ito Takashi

  Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan

• Suemitsu Maki

  Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

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