Infrared Study of SiH_4-Adsorbed Si(100) Surfaces : Observation and Mode Assignment of New Peaks : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-09-15
著者
-
Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
-
TSUKIDATE Yoshikazu
Research Institute of Electrical Communication, Tohoku University
-
Tsukidate Yoshikazu
Research Institute Of Electrical Communication Tohoku University
関連論文
- Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500-800℃
- Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
- Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
- Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
- EPR Study on Cr^ Distribution in LEC GaAs: Cr Wafers
- Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
- Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
- Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
- Infrared Study of SiH_4-Adsorbed Si(100) Surfaces : Observation and Mode Assignment of New Peaks : Semiconductors
- Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
- High Quality Silicon Epitaxy at 500℃ using Silane Gas-Source Molecular Beam Technique
- Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
- Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
- High-Frequency Coherent Phonons in Graphene on Silicon
- Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
- Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
- Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
- Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
- Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
- Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
- Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
- Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates