Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
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概要
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Temperature dependence of the growth rate of 3C-SiC films on Si(001) during ultralow-pressure chemical vapor deposition (ULP-CVD) using monomethylsilane is reported. At low temperatures the growth rate is high and thermally activated, but a drastic drop of the growth rate occurs at a critical temperature $T_{\text{c}}$. Another characteristic temperature $T^{*}$ ($\leq T_{\text{c}}$) separates single-crystalline and polycrystalline SiC(001)/Si growth. With a two-step growth procedure, consisting of a high temperature nucleation of a seeding 3C-SiC(001) layer followed by a low-temperature deposition, we have realized a high-rate (${\sim}3$ μm/h) growth of a single-crystalline 3C-SiC(001) film.
- 2011-01-25
著者
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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Saito Eiji
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Filimonov Sergey
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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