Suemitsu Maki | Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

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著作論文

Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500-800℃
Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
EPR Study on Cr^ Distribution in LEC GaAs: Cr Wafers
Effects of Adsorption Kinetics on the Low-Temperature Growth-Rate Activation Energy in Si Gas-Source Molecular Beam Epitaxy
Observation of Hydrogen-Coverage- and Temperature-Dependent Adsorption Kinetics of Disilane on Si(100) during Si Gas-Source Molecular Beam Epitaxy
Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement
Surface Hydrogen Desorption as a Rate-Limiting Process in Silane Gas-Source Molecular Beam Epitaxy
High Quality Silicon Epitaxy at 500℃ using Silane Gas-Source Molecular Beam Technique
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
High-Frequency Coherent Phonons in Graphene on Silicon
Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
Structure, Chemical Bonding and These Thermal Stabilities of Diamond-Like Carbon (DLC) Films by RF Magnetron Sputtering
Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
Epitaxial Growth Processes of Graphene on Silicon Substrates
Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
Controls over Structural and Electronic Properties of Epitaxial Graphene on Silicon Using Surface Termination of 3C-SiC(111)/Si
Characteristics of Silicon/Nitrogen-Incorporated Diamond-Like Carbon Films Prepared by Plasma-Enhanced Chemical Vapor Deposition
Epitaxy of Graphene on 3C-SiC(111) Thin Films on Microfabricated Si(111) Substrates
Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (I)—Optimization of the HF Treatment—
Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)—in situ UVOC

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