Otsuji Taiichi | Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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概要
- Otsuji Taiichiの詳細を見る
- 同名の論文著者
- Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japanの論文著者
関連著者
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
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Ryzhii Victor
Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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Otsuji Taiichi
Japan Science And Technology Agency Crest
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Otsuji Taiichi
Tohoku Univ. Sendai Jpn
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
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RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
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Nishimura Takuya
Research Institute Of Electrical Communication Tohoku University
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Suemitsu Tetsuya
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
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Ryzhii V
Univ. Aizu Fukushima
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Kang HyunChul
Research Institute of Electrical Communication, Tohoku University
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Nishimura Takuya
Research Institute of Electrical Communication, Tohoku University
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Hanabe Mitsuhiro
Research Institute Of Electrical Communication Tohoku University
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Kang Hyunchul
Research Institute Of Electrical Communication Tohoku University
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Suemitsu Tetsuya
Research Institute Of Electrical Communication Tohoku University
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Boubanga Tombet
Research Institute Of Electrical Communication Tohoku University
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Ryzhii Victor
Univ. Aizu Aizu‐wakamatsu Jpn
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Sano Eiichi
Hokkaido Univ. Sapporo Jpn
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HANABE Mitsuhiro
Kyushu Institute of Technology
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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Magome Nobuhiro
Research Institute Of Electrical Communication Tohoku University
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Tanimoto Yudai
Research Institute Of Electrical Communication Tohoku University
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Handa Hiroyuki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
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Mitin Vladimir
Department Of Electrical And Computer Engineering Wayne State University
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MAGOME Nobuhiro
Research Institute of Electrical Communication, Tohoku University
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Satou Akira
Research Institute Of Electrical Communication Tohoku University
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Handa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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HANABE Mitsuhiro
Research Institute of Electrical Communication, Tohoku University
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NISHIMURA Takuya
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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HANABE Mitsuhiro
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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MIYAMOTO Masaki
Graduate School of Computer Science and Systems Engineering, Kyushu Institute of Technology
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SHUR Michael
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
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Asano Tanemasa
Department Of Electronics Graduate School Of Information Science And Electrical Engineering Kyushu U
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Watanabe Naoya
Department Of Cardiology Yodogawa Christian Hospital
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Meziani Yahya
Research Institute Of Electrical Communication Tohoku University
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Asano Tanemasa
Department Of Electronics Faculty Of Information Science And Electrical Engineering Kyushu Universit
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Watanabe Naoya
Department Of Electronics Faculty Of Information Science And Electrical Engineering Kyushu Universit
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Nishimura Takuya
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology:(present
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Shur Michael
Department Of Electrical Electronics And System Engineering Rensselaer Polytechnic Institute
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Miyamoto Masaki
Graduate School Of Computer Science And Systems Engineering Kyushu Institute Of Technology
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Asano Tanemasa
Department Of Computer Science And Electronics Kyushu Institute Of Technology
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Shur Michael
Department Of Electrical Computer And System Engineering Rensselaer Polytechnic Institute
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Narahara Koichi
Department Of Electrical Engineering Yamagata University
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SATOU Akira
Research Institute of Electrical Communication, Tohoku University
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Ryabova Nadezhda
Computational Nanoelectronics Laboratory University Of Aizu Aizu-wakamatsu
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El Moutaouakil
Research Institute Of Electrical Communication Tohoku University
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Kang Hyun-Chul
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Jung Myung-Ho
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Ryzhii Maxim
Computational Nanoelectronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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Satou Akira
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Takahashi Ryota
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Kang Hyun-Chul
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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El Moutaouakil
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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尾辻 泰一
Ntt光ネットワークシステム研究所
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MEZIANI Yahya
Research Institute of Electrical Communication, Tohoku University
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ASANO Tanemasa
Graduate School of Information Science and Electrical Engineering, Kyushu University
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MITIN Vladimir
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu
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RYABOVA Nadezhda
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu
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SATOU Akira
Computer Solid State Physics Laboratory, University of Aizu
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Hayashi Hiroyuki
Institute of Physics, University of Tsukuba
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Moubarak Meziani
Research Institute Of Electrical Communication Tohoku University
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Takakuwa Yuji
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University:crest Japan Science And Techn
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RYZHII Victor
Comp. Solid State Physics Lab, Univ. of Aizu
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RYZHII Maxim
Comp. Solid State Physics Lab, Univ. of Aizu
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KHMYROVA Irina
Comp. Solid State Physics Lab, Univ. of Aizu
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SHUR Michael
Dept. of ECS Eng., Rensselaer Polytechnic Inst.
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Asano Tanemasa
Graduate School Of Information Science And Electrical Engineering Kyushu University
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Khmyrova Irina
Computational Nanoelectronics Laboratory University Of Aizu
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Mitin Vladimir
Department Of Electrical Engineering University At Buffalo
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Khmyrova I
Comp. Solid State Physics Lab Univ. Of Aizu
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尾辻 康一
九州工大
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University:crest Japan Science And Technology
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BOUBANGA TOMBET
Research Institute of Electrical Communication, Tohoku University
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EL MOUTAOUAKIL
Research Institute of Electrical Communication, Tohoku University
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KOMORI Tsuneyoshi
Research Institute of Electrical Communication, Tohoku University
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HORIIKE Kouhei
Research Institute of Electrical Communication, Tohoku University
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Horiike Kouhei
Research Institute Of Electrical Communication Tohoku University
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Ogawa Shuichi
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Komori Tsuneyoshi
Research Institute Of Electrical Communication Tohoku University
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Takahashi Ryota
Research Institute Of Electrical Communications Tohoku University
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DEL ALAMO
Massachusetts Institute of Technology
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佐藤 昭
Research Institute of Electrical Communication, Tohoku University
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del Alamo
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Olac-vaw Roman
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Karasawa Hiromi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Miyamoto Yu
Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Fukidome Hirokazu
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Ryzhii Victor
Computational Nanoelectronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan
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Ryzhii Victor
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
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Kim Dae-Hyun
Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Fukuda Shunsuke
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Nobuhiro Magome
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electric Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Khmyrova Irina
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
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Hanabe Mitsuhiro
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Satou Akira
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Shur Michael
Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, AL 12180, U.S.A.
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Meziani Yahya
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan
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Nakamichi Toru
Department of Electrical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
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Mitin Vladimir
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 1460-1920, U.S.A.
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Mitin Vladimir
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260-1920, U.S.A.
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Ryzhii Maxim
Computer Solid State Physics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
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Ryzhii Maxim
Computational Nanoelectronics Laboratory, University of Aizu, Aizu-Wakamatsu, Fukushima 965-8580, Japan
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Takuya Nishimura
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Narahara Koichi
Department of Electrical Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
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Sano Eiichi
JST--CREST Japan Science and Technology Agency, Chiyoda, Tokyo 102-8666, Japan
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Yang Meng
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Takabayashi Susumu
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Ješko Radek
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Hayashi Hiroyuki
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Fukidome Hirokazu
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Handa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Takatsuka Yuya
Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo 060-8628, Japan
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Suemitsu Maki
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
著作論文
- Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
- Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Device Model for Graphene Nanoribbon Phototransistor
- Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
- Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
- 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
- Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
- Resonant terahertz photomixing in integrated HEMT-QWIP device
- Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
- Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resonance in a Dual-Grating-Gate High-Electron-Mobility Transistor
- Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
- Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Graphene Nanoribbon Phototransistor: Proposal and Analysis
- Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
- Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
- Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
- Theoretical Study of Population Inversion in Graphene under Pulse Excitation
- Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
- Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
- Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
- Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
- Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
- Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
- Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
- Pulse Compression by Quasi-Steady Propagation along Switch Lines
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
- Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
- Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
- Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
- Development of Solitons in Composite Right- and Left-Handed Transmission Lines Periodically Loaded with Varactors with Symmetrical Capacitance–Voltage Characteristics
- Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition