Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures

スポンサーリンク

概要

• 論文の詳細を見る

• We calculate the responsivity and dark-current-limited detectivity of terahertz and infrared interband detectors based on p--i--n junctions in the multiple graphene layer structures proposed recently. It is demonstrated that the interband tunneling can be an essential limiting mechanism of the ultimate values of detectivity. To achieve the ultimate detectivity, the optimization of the device structure and the proper choice of the temperature and the bias voltage are required. We show that owing to high values of the quantum efficiency and relatively low rates of thermogeneration, the detectors under consideration can exhibit high responsivity and detectivity at elevated temperatures (in particular, at room temperature) in a wide radiation spectrum and can substantially surpass other detectors.

• 2011-07-25

著者

• RYZHII Maxim

  Computational Nanoelectronics Laboratory, University of Aizu

• Ryzhii Victor

  Computational Nanoelectronics Laboratory University Of Aizu

• Mitin Vladimir

  Department Of Electrical And Computer Engineering Wayne State University

• Otsuji Taiichi

  Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan

• Ryzhii Maxim

  Computational Nanoelectronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan

• Mitin Vladimir

  Department of Electrical Engineering, University at Buffalo, Buffalo, NY 1460-1920, U.S.A.

• Ryzhii Victor

  Computational Nano-Electronics Laboratory, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan

関連論文

• Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Terahertz Laser with Optically Pumped Graphene Layers and Fabri-Perot Resonator
• Device Model for Graphene Nanoribbon Phototransistor
• Tunneling Current-Voltage Characteristics of Graphene Field-Effect Transistor
• Resonant Terahertz Detection Based on High-electron-mobility Transistor with Schottky Source/Drain Contact
• Electric-Field Breakdown of Absolute Negative Conductivity and Supersonic Streams in Two-Dimensional Electron Systems with Zero Resistance/Conductance States
• Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Resonant Detection and Frequency Multiplication in Barrier-Injection Heterostructure Transistors
• Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plaslma Oscillations in High-Electron-Mobility Transistors : Semiconductors
• Analysis of the Photocurrent in Quantum Dot Infrared Photodetectors : Semiconductors
• 招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
• Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors
• Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p-i-n Junction
• Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device (Special Issue: Solid State Devices & Materials)
• Resonant terahertz photomixing in integrated HEMT-QWIP device
• Dark Current in Quantum Dot Infrared Photodetectors
• Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
• Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
• Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors
• Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
• High-Frequency Response of Metal-Semiconductor-Metal Photodetectors Limited by Dynamic and Recombination Effects
• Influence of Electron Velocity Overshoot Effect on High-Frequency Characteristics of Quantum Well Infrared Photodetectors
• Optically Controlled Plasma Resonances in Induced-Base Hot-Electron Transistors
• High-Frequency Response of Intersubband Infrared Photodetectors with a Multiple Quantum Well Structure
• Resonant-Tunneling Bipolar Transistors with a Quantum-Well Base
• Modeling of Lateral Hot-Electron Phototransistor for Long-Wave Length Infrared Radiation
• Quantum Well Infrared Photodetector with Optical Output
• Threshold Behavior of Photoresponse of Plasma Waves by New Photomixer Devices
• Injection and Population Inversion in Electrically Induced p-n Junction in Graphene with Split Gates
• Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resonance in a Dual-Grating-Gate High-Electron-Mobility Transistor
• Theoretical study of population inversion in graphene under pulse excitation (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
• Graphene Nanoribbon Phototransistor: Proposal and Analysis
• Effect of Photon Recycling in Pixelless Imaging Device
• Effect of Heating and Cooling of Photogenerated Electron--Hole Plasma in Optically Pumped Graphene on Population Inversion
• Terahertz Amplifiers based on Multiple Graphene Layer with Field-Enhancement Effect
• Characteristics of p--i--n Terahertz and Infrared Photodiodes Based on Multiple Graphene Layer Structures
• Theoretical Study of Population Inversion in Graphene under Pulse Excitation
• Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
• Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
• Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
• Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems
• Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
• Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction
• Coherent and tunable terahertz emission from nano-metric field effect transistor at room temperature (電子デバイス)
• Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
• Pulse Compression by Quasi-Steady Propagation along Switch Lines
• Detection of Modulated Terahertz Radiation Using Combined Plasma and Mechanical Resonances in Double-Carbon-Nanotube Device
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Room Temperature Terahertz Emission from coherent excitation of 2D plasmon
• Analysis of Gate Delay Scaling in In0.7Ga0.3As-Channel High Electron Mobility Transistors
• Asymmetrically Doped GaAs/AlGaAs Double-Quantum-Well Structure for Voltage-Tunable Infrared Detection
• Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device
• High-Frequency Characteristics of Quantum Well Infrared Photodetectors with Blocking Barrier
• Theoretical Evaluation of Channel Structure in Graphene Field-Effect Transistors
• Threshold Behavior of Photoinduced Plasmon-Resonant Self-Oscillation in a New Interdigitated Grating Gates Device
• Development of Solitons in Composite Right- and Left-Handed Transmission Lines Periodically Loaded with Varactors with Symmetrical Capacitance–Voltage Characteristics
• Terahertz Plasma Waves in Gated Graphene Heterostructures
• Nonlocal Hot-Electron Transport and Capture Model for Multiple Quantum Well Structures Excited by Infrared Radiation
• Microwave-Induced Suppression of Dissipative Conductivity and Its Shubnikov–de Haas Oscillations in Two-Dimensional Electron Systems: Effects of Dynamic Electron Localization and Plasma Reflection
• Formation of Diamond-Like Carbon Films by Photoemission-Assisted Plasma-Enhanced Chemical Vapor Deposition
• グラフェンにおけるテラヘルツ二次元プラズモンのシミュレーションによる解析(テラヘルツ応用,シミュレーション技術,一般)
• Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures

もっと見る 閉じる

スポンサーリンク