Source and Drain Structures for Suppressing Ambipolar Characteristics of Graphene Field-Effect Transistors

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2009-06-25

著者

• Sano Eiichi

  Research Center For Integrated Quantum Electronics Hokkaido University

• Otsuji Taiichi

  Research Institute Of Electrical Communication Tohoku University

• Sano Eiichi

  Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University

• Otsuji Taiichi

  Research Institute of Electrical Communication, Tohoku University

• Otsuji Taiichi

  Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan

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