招待講演 Theoretical study on graphene field-effect transistors (Silicon devices and materials)
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概要
- 論文の詳細を見る
Graphene is one of the most attractive materials for "beyond CMOS" electronics. We investigate graphene-layer compositions suitable for the channel in graphene field-effect transistors (GFETs) in terms of the energy band structure and charge controllability. We examine three major methods of opening a bandgap in graphene. We then compare the threshold voltage and subthreshold-slope characteristics as measures of short-channel effects for GFETs, where graphene is modeled as a narrow-gap semiconductor based on the band consideration, with those for ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs using a drift-diffusion-based simulator. The intrinsic delay times for GFETs are also compared with those for UTB-SOI MOSFETs.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University
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Sano Eiichi
Research Center For Integrated Quantum Electronics Hokkaido University:crest Japan Science And Techn
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Sano Eiichi
Research Center For Integrated Quantum Electronics (rciqe) Hokkaido University
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Otsuji Taiichi
Research Institute Of Electrical Communication Tohoku University:crest Japan Science And Technology
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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