Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
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概要
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Epitaxial-graphene field-effect transistor (EG-FET) with a polymer gate dielectric was fabricated and their electrical characteristics were investigated. The epitaxial graphene layer was formed on a semi-insulating 6H-SiC substrate by a high-temperature annealing in ultrahigh vacuum. The formation of graphene was confirmed by low-energy electron diffraction (LEED), Raman-scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). The polymer gate dielectric (ZEP520a) layer was formed by spin coating, which exhibits good dielectric properties without noticeable structural degradation of the graphene layer. The EG-FETs with this polymer gate dielectric shows an n-type characteristic, with the field-effect mobility of 580 cm2 V-1 s-1.
- 2011-07-25
著者
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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Jung Myung-Ho
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Otsuji Taiichi
Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Takahashi Ryota
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Suemitsu Tetsuya
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Handa Hiroyuki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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