Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
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概要
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With its industrial adaptability, <i>graphene-on-silicon</i> (GOS), formed by ultrahigh-vacuum annealing of a SiC thin film on a silicon substrate, is attracting recent attention. Little is known, however, about the growth mechanism of GOS. We demonstrate in this paper that temperature-programmed-desorption spectroscopy of deuterium (D<sub>2</sub>-TPD) can be a powerful <i>in-situ</i> probe to investigate the surface chemistry during formation of epitaxial graphene (EG) on SiC crystals. Using the D<sub>2</sub>-TPD, the surface stoichiometry and the back-bonds of the surface atoms, including their dependence on the crystallographic orientations [Si(111), Si(100), and Si(110)] can be obtained. Difference in the growth mechanism of GOS among the orientations is discussed based on the results.
- 2011-07-25
著者
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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Imaizumi Kei
Research Institute Of Electrical Communications Tohoku University
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Handa Hiroyuki
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Takahashi Ryota
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Abe Shunsuke
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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Imaizumi Kei
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Handa Hiroyuki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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