High-Frequency Coherent Phonons in Graphene on Silicon
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概要
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High-frequency coherent vibrations have been investigated in graphene on silicon substrates using pump-probe anisotropic reflectivity spectroscopy with 7.5 fs laser pulses. The coherent phonons of both the intralayer C{\dbond}C stretching mode (G-mode) and the disorder-induced mode (D-mode) are clearly observed even in monolayer graphenes. The G-mode shifts to higher frequencies as the number of graphene layers decreases, whereas the D-mode does not exhibit such hardening. Moreover, the D-mode softens upon photoexcitation and then shifts to higher frequencies during the relaxation process. The different frequency shift behaviors in the G- and D-modes are discussed.
- 2011-04-25
著者
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Suemitsu Maki
Research Institute Of Electrical Communication Tohoku University
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Fukidome Hirokazu
Research Center For Photoenergetics Of Organic Materials Osaka University
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Takeda Jun
Department Of Biological Sciences Graduate School Of Science Tokyo Metropolitan University
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Abe Shunsuke
Research Institute Of Electrical Communications Tohoku University
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Kitajima Masahiro
Department of Applied Physics, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Koga Sho
Department of Physics, Graduate School of Engineering, Yokohama National University, Yokohama 240-8501, Japan
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Katayama Ikufumi
Interdisciplinary Research Center, Yokohama National University, Yokohama 240-8501, Japan
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Abe Shunsuke
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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Abe Shunsuke
Research Institute of Electrical Communications, Tohoku University, Sendai 980-8577, Japan
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Suemitsu Maki
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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