Growth Mode and Characteristics of the O_2-Oxidized Si(100) Surface Oxide Layer Observed by Real Time Photoemission Measurement

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-01-15

著者

• Kato Hiroo

  Photon Factory, National Laboratory for High Energy Physics (KEK)

• Kato H

  Photon Factory High Energy Accelerator Research Organization

• Kato Hiroo

  Institute Of Material Structure Science High Energy Accelerator Research Organization

• Kato Hiromichi

  Department Of Materials Science And Engineering Nagoya Institute Of Technology

• Suemitsu M

  Tohoku Univ. Sendai Jpn

• Suemitsu Maki

  Research Institute Of Electrical Communication Tohoku University

• MIYAMOTO Nobuo

  Faculty of Engineering, Tohoku Gakuin University

• TAKEGAWA Youichi

  Research Institute of Electrical Communication, Tohoku University

• ENTA Yoshiharu

  Research Institute of Electrical Communication, Tohoku University

• Kato Hisayuki

  Semiconductor Design & Development Center Hitachi Ltd.

• Enta Yoshiharu

  Research Institute Of Electrical Communication Tohoku University

• Takegawa Youichi

  Research Institute Of Electrical Communication Tohoku University:(present Address) Research & De

• Takegawa Y

  Tohoku Univ. Sendai Jpn

• Kato Hiroo

  Photon Factory High Energy Accelerator Research Organization

• Kato H

  Department Of Mechanical And Intelligent Engineering Graduate School Of Engineering Utsunomiya Unive

• Miyamoto Nobuo

  Faculty Of Engineering Tohoku Gakuin University

• MIYAMOTO Naokazu

  SPring-8 Service Co., Ltd.

• Suemitsu Maki

  Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan

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