Photon-Stimulated Desorption of H+ Ions from Oxidized Si(111) Surfaces
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概要
- 論文の詳細を見る
Photon-stimulated desorption (PSD) experiments on oxidized Si(111) surfaces were performed to study the adsorption of hydrogen at the SiO2/Si(111) interface using synchrotron radiation. H+ is found to be the only ion product desorbing in significant quantities from the oxidized surfaces at photon energies above 20 eV. PSD spectra of H+ ions, i.e., the H+ ion desorption yield as a function of photon energy, exhibit two peaks at 23 eV and 33 eV. These peaks are interpreted in terms of Si–H bond and O–H bond breaking in a Si–H and Si–OH complex, respectively. The observed dependence of the H+ ion yield on oxidation temperature implies that the peak at 23 eV originates from hydrogen atoms adsorbed onto the so-called Pb centers at the SiO2/Si(111) interface. A comparison between the PSD and the total photoelectric yield spectra, the latter of which corresponds to the photoabsorption spectrum, is also made.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-12-20
著者
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Takakuwa Yuji
Research Institute For Scientific Measurements Tohoku University
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KATAKURA Hitoshi
Research Institute of Electrical Communication, Tohoku University
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ISHIDA Hiroyuki
Research Institute of Electrical Communication, Tohoku University
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Nogawa Masafumi
Research Institute Of Electrical Communication Tohoku University:(present) Lsi Laboratory Ntt Ltd.
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Niwano Michio
Research Institute Of Electrical Communication (riec) Tohoku University
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Kato Hiroo
Photon Factory High Energy Accelerator Research Organization
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Miyamoto Nobuo
Research Development Corporation Of Japan (jrdc)
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Matsuyoshi Satoshi
Research Institute Of Electrical Communication Tohoku University
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Kato Hiroo
Photon Factory, National Laboratory for High Energy Physics, Tsukuba-shi, Ibaraki 305
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Ishida Hiroyuki
Research Institute of Electrical Communication, Tohoku University, Sendai 980
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Takakuwa Yuji
Research Institute of Electrical Communication, Tohoku University, Sendai 980
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Matsuyoshi Satoshi
Research Institute of Electrical Communication, Tohoku University, Sendai 980
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Nogawa Masafumi
Research Institute of Electrical Communication, Tohoku University, Sendai 980
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